0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC3295 features high h fe :h fe =600 3600. high voltage: v ceo =50v. high collector current: i c = 150 ma (max). small package. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 150 mw junction temperature tj 125 storage temperature range t stg -55to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v,i c = 2 ma 600 3600 collector-emitter saturation voltage v ce (sat) i c = 100 ma, i b = 10 ma 0.12 0.25 v transition frequency f t v ce =10v,i c = 10 ma 100 250 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf nf(1) v ce =6v,i c = 0.1 ma, f = 100 hz, rg = 10k 0.5 db nf(2) v ce =6v,i c = 0.1 ma, f = 100 hz, rg = 10k 0.3 db noise figure h fe classification marking pa pb hfe 600 1800 1200 3600 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors product specification 4008-318-123
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